? 2010 ixys corporation, all rights reserved ds99739g(10/10) polar tm power mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated IXTP18N60PM features z plastic overmolded tab for electrical isolation z international standard package z low r ds(on) and q g z avalanche rated z low package inductance z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls v dss = 600v i d25 = 9a r ds(on) 420m g = gate d = drain s = source overmolded (ixtp...m) outline g d s symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 9a, note 1 420 m symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c9 a i dm t c = 25 c, pulse width limited by t jm 54 a i a t c = 25 c18 a e as t c = 25 c 1 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c90 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 2.5 g isolated tab
IXTP18N60PM ixys reserves the right to change limits,test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 12 3 overmolded to-220 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 9a, note 1 9 16 s c iss 2500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 280 pf c rss 23 pf t d(on) 21 ns t r 22 ns t d(off) 62 ns t f 22 ns q g(on) 50 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 9a 15 nc q gd 18 nc r thjc 1.39 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 18 a i sm repetitive, pulse width limited by t jm 54 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 9a r g = 5 (external) i f = i s , v gs = 0v, -di/dt = 100a/ s v r = 100v note: 1. pulse test, t 300 s, duty cycle, d 2%.
? 2010 ixys corporation, all rights reserved IXTP18N60PM fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 012345678 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j =125oc 0 2 4 6 8 10 12 14 16 18 024681012141618 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 9a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 18a i d = 9a fig. 5. r ds(on) normalized to i d = 9a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 5 10 15 20 25 30 35 40 45 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTP18N60PM ixys reserves the right to change limits,test conditions, and dimensions. ixys ref: f_18n60p(63)8-21-06-b fig. 7. input admittance 0 5 10 15 20 25 30 35 40 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 0 4 8 1216202428323640 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 300v i d = 9a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 pulse w idth - seconds z (th)jc - oc / w
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